Semiconductor Epitaxy and Analysis Laboratory (SEAL)


SEAL Molecular Beam Epitaxy (MBE) Lab (Cleanroom):  095 Dreese Laboratories, 2015 Neil Avenue, Columbus, Ohio

SEAL Analysis Lab:  360 Caldwell Laboratory, 2024 Neil Avenue, Columbus, Ohio


Contact: Mark Brenner, Lab Manager, 614-688-4568,



The Semiconductor Epitaxy and Analysis Laboratory (SEAL) is Ohio State’s primary facility for molecular beam epitaxy (MBE). SEAL is home to five state of the art MBE chambers, each dedicated to different, complementary material systems, to ensure high quality material epitaxy for both basic studies and true device development.  Research is focused ona broad range of semiconductor materials, including AlGaInAsP, AlGaInNx and SiGe. Several chambers are integrated into ultra-high vacuum (UHV) cluster tools enabling an unusual range of hybrid structures and devices.

Vacuum Cluster I encompasses two MBE chambers and an analytical system allowing III-V/IV integration studies and high resolution x-ray photoelectron spectroscopy (XPS) for in-situ chemical studies of pristine surfaces and interfaces.  Vacuum Cluster II enables growth of magnetic epilayers and spin detectors on pristine nitride hetereostructures through two MBE chambers.  The lab also includes a wide range of advanced, state of the art materials characterization tools to support advanced epitaxy and forefront advances in electronic materials.  SEAL is a fully staffed user facility open to university and industry researchers.



Available Instrumentation

  • MBE1: Highly modified 3 inch Varian GENII solid source III-V MBE chamber for GaAlInAsP family of materials
  • MBE2: Solid source MBE chamber for epitaxial metals, spintronic metals, Si and Ge.
  • MBE3: 3 inch Varian GENII based solid source MBE chamber for exploratory materials (currently under renovation)
  • MBE4: Veeco 930 solid source Plasma-assisted MBE chamber for AlGaInN family materials
  • MBE5: NH3-based III-N MBE chamber (under construction)
  • X-ray photoelectron spectroscopy (XPS) analytic chamber, interconnected with MBE1,2,3 systems; includes monochromatized Al Kα  x-ray source and temperature-dependent measurements
  • BEDE D1 High Resolution Triple Axis X-ray Diffraction System with x-ray reflectivity, symmetric and assymetric reciprocal space mapping, environmental stage and x-ray topography
  • Variable field and temperauture Lakeshore Cryotronics Hall Effect system, including  QMSA capability; temperature range is 10k-325K and with fields up to 10T
  • Photoluminescence (PL) Spectroscopy:  Low temperature capability and 488nm Argon laser


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